|
|
PDF RJH60F5DPQ-A0 Data sheet ( Hoja de datos )
| Número de pieza | RJH60F5DPQ-A0 | |
| Descripción | High Speed Power Switching | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RJH60F5DPQ-A0 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Preliminary Datasheet
RJH60F5DPQ-A0
600 V - 40 A - IGBT
High Speed Power Switching
R07DS0326EJ0200
Rev.2.00
Jul 22, 2011
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
123
Absolute Maximum Ratings
www.DataSheet.net/
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-cd
Tj
Tstg
1. Gate
2. Collector
3. Emitter
4. Collector
E
Ratings
600
±30
80
40
160
100
260.4
0.48
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0326EJ0200 Rev.2.00
Jul 22, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
RJH60F5DPQ-A0
Switching Characteristics (Typical) (1)
1000
tf
td(off)
100
tr
td(on)
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
10 tr includes the diode recovery
1 10 100 200
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
240
VCC = 400 V, VGE = 15 V
200 IC = 30 A, Rg = 5 Ω
tr includes the diode recovery
160
tf
120 td(off)
80 tr
40 td(on)
0
0 25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100000
10000
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
Eon includes the diode recovery
1000
100
10
1
Eoff
Eon
10 100 200
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
1200
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
Eon includes the diode recovery
Eoff
800
Eon
400
www.DataSheet.net/
0
0 25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0326EJ0200 Rev.2.00
Jul 22, 2011
Page 5 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RJH60F5DPQ-A0.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RJH60F5DPQ-A0 | High Speed Power Switching | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |