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N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
JCS4N60V/R/S/B/C/F
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 4.0 A
VDSS 600 V
Rdson(@Vgs=10V) 2.5Ω
Qg 27 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 14pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 14pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
www.DataSheet.net/
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
封装
Package
JCS4N60V-O-V-N-B
JCS4N60R-O-R-N-B
JCS4N60S-O-S-N-B
JCS4N60B-O-B-N-B
JCS4N60C-O-C-N-B
JCS4N60F-O-F-N-B
JCS4N60V
JCS4N60R
JCS4N60S
JCS4N60B
JCS4N60C
JCS4N60F
IPAK
DPAK
TO-263
TO-262
TO-220C
TO-220MF
无卤素 包 装
Halogen Free Packaging
否 NO
否 NO
否 NO
否 NO
否 NO
否 NO
条管 Tube
条管 Tube
条管 Tube
条管 Tube
条管 Tube
条管 Tube
器件重量
Device
Weight
0.35 g(typ)
0.30 g(typ)
1.37 g(typ)
1.71 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:200911A
1/13
Datasheet pdf - http://www.DataSheet4U.co.kr/
JCS4N60V/R/S/B/C/F
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
10 Top
VGS
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
Transfer Characteristics
10
150℃
1
1 Notes:
1. 250μs pulse test
2. TC=25℃
10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
3.2
3.0
2.8 VGS=10V
2.6
2.4 VGS=20V
2.2
2.0
Note :Tj=25℃
1.8
0123456
ID [A]
Capacitance Characteristics
25℃
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2 4 6 8 10
VGS[V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
25℃
1
www.DataSheet.net/
0.1
0.4
12
10
8
150℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD [V]
Gate Charge Characteristics
VDS=480V
VDS=300V
VDS=120V
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Qg Toltal Gate Charge [nC]
版本:200911A
5/13
Datasheet pdf - http://www.DataSheet4U.co.kr/