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Número de pieza | 2N5307 | |
Descripción | NPN Darlington Transistor | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N5307 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! 2N5307
Discrete POWER & Signal
Technologies
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
12
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N5307
625
5.0
83.3
200
Units
V
V
V
A
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2N5307.PDF ] |
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