DataSheet.es    


PDF 2N5303 Data sheet ( Hoja de datos )

Número de pieza 2N5303
Descripción POWER TRANSISTORS NPN SILICON
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de 2N5303 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! 2N5303 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5301/D
High-Power NPN Silicon
Transistors
. . . for use in power amplifier and switching circuits applications.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303)
Excellent Safe Operating Area —
200 Watt dc Power Rating to 30 Vdc (2N5303)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎComplements to PNP 2N4398, 2N4399 and 2N5745
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol 2N5301 2N5302 2N5303
VCEO
40
60
80
VCB
40
60
80
IC 30 30 20
IB 7.5
PD 200
1.14
TJ, Tstg
– 65 to + 200
Unit
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Case to Ambient
Symbol
θJC
θCA
Max
0.875
34
Unit
_C/W
_C/W
* Indicates JEDEC Registered Data.
TA TC
8.0 200
2N5301
2N5302
2N5303
20 AND 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 – 60 – 80 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
6.0 150
TC
4.0 100
2.0 50
TA
00
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

1 page




2N5303 pdf
103
VCE = 30 V
102
TJ = 175°C
100°C
101
100
IC = ICES
10–1
25°C
10– 2 REVERSE
FORWARD
10– 3
– 0.4 – 0.3 – 0.2 – 0.1 0 0.1 0.2 0.3 0.4 0.5
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut–Off Region
0.6
2N5301 2N5302 2N5303
+ 2.5
++ 2.0 TJ = – 55°C to +175°C
+ 1.5
*APPLIES FOR IC/IB <
hFE
@
VCE
2
2.0 V
+ 1.0
+ 0.5
*θVC for VCE(sat)
0
– 0.5
– 1.0
– 1.5 θVB for VBE(sat)
– 2.0
– 2.5
0.03 0.05 0.1 0.3 0.5
1.0 3.0 5.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 14. Temperature Coefficients
30
Motorola Bipolar Power Transistor Device Data
5

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet 2N5303.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2N5301POWER TRANSISTORS(200W)Mospec Semiconductor
Mospec Semiconductor
2N5301POWER TRANSISTORS NPN SILICONON Semiconductor
ON Semiconductor
2N5301Bipolar NPN DeviceSeme LAB
Seme LAB
2N5301Silicon NPN Power TransistorsInchange Semiconductor
Inchange Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar