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Número de pieza | 2N5301 | |
Descripción | POWER TRANSISTORS NPN SILICON | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5301/D
High-Power NPN Silicon
Transistors
. . . for use in power amplifier and switching circuits applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303)
• Excellent Safe Operating Area —
200 Watt dc Power Rating to 30 Vdc (2N5303)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Complements to PNP 2N4398, 2N4399 and 2N5745
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol 2N5301 2N5302 2N5303
VCEO
40
60
80
VCB
40
60
80
IC 30 30 20
IB 7.5
PD 200
1.14
TJ, Tstg
– 65 to + 200
Unit
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Case to Ambient
Symbol
θJC
θCA
Max
0.875
34
Unit
_C/W
_C/W
* Indicates JEDEC Registered Data.
TA TC
8.0 200
2N5301
2N5302
2N5303
20 AND 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 – 60 – 80 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
6.0 150
TC
4.0 100
2.0 50
TA
00
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page 103
VCE = 30 V
102
TJ = 175°C
100°C
101
100
IC = ICES
10–1
25°C
10– 2 REVERSE
FORWARD
10– 3
– 0.4 – 0.3 – 0.2 – 0.1 0 0.1 0.2 0.3 0.4 0.5
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut–Off Region
0.6
2N5301 2N5302 2N5303
+ 2.5
++ 2.0 TJ = – 55°C to +175°C
+ 1.5
*APPLIES FOR IC/IB <
hFE
@
VCE
2
2.0 V
+ 1.0
+ 0.5
*θVC for VCE(sat)
0
– 0.5
– 1.0
– 1.5 θVB for VBE(sat)
– 2.0
– 2.5
0.03 0.05 0.1 0.3 0.5
1.0 3.0 5.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 14. Temperature Coefficients
30
Motorola Bipolar Power Transistor Device Data
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2N5301.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N5301 | POWER TRANSISTORS(200W) | Mospec Semiconductor |
2N5301 | POWER TRANSISTORS NPN SILICON | ON Semiconductor |
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2N5301 | Silicon NPN Power Transistors | Inchange Semiconductor |
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