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PDF 2N5298 Data sheet ( Hoja de datos )
| Número de pieza | 2N5298 | |
| Descripción | Silicon NPN Transistor | |
| Fabricantes | ETC | |
| Logotipo |  |
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Power Transistors
2N5298
Silicon NPN Transistors
Features
With TO-220 package
Designed for use in general purpose amplifier and switching
applications
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RATING
80
60
5.0
5.0
4.0
36
-65~150
-65~150
UNIT
V
V
V
A
A
W
Electrical Characteristics Tc=25
SYMBOL
ICBO
IEBO
ICEO
VCBO
V(BR)CEO
VEBO
VCEsat-1
VCEsat-2
VCEsat-3
VCEsat-4
hFE-1
hFE-2
hFE-3
hFE-4
VBE(sat)1
VBE(sat)2
VBE(sat)3
fT
tf
ts
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frequency at f = 1MHz
Fall time
Tum-off storage time
CONDITIONS
VCB = 80V; IE=0
VEB = 5V; IC=0
VCE=60V,IB=0
IC=30mA,IB=0
IC = 3A; IB = 375mA
IC=1A,VCE=4V
IC=3A,VCE=4V
IC=3A,VCE=4V
IC=0.5A,VCE=10V
INCHANGE
TO-220
MIN MAX UNIT
0.2 mA
1.0 mA
0.3 mA
60 V
1.2 V
25
10 50
1.8 V
3.0
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