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PDF NCV898031 Data sheet ( Hoja de datos )
| Número de pieza | NCV898031 | |
| Descripción | 2 MHz Non-Synchronous SEPIC/Boost Controller | |
| Fabricantes | ON Semiconductor | |
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NCV898031
2 MHz Non-Synchronous
SEPIC/Boost Controller
The NCV898031 is an adjustable output non−synchronous 2 MHz
SEPIC/boost controller which drives an external N−channel
MOSFET. The device uses peak current mode control with internal
slope compensation. The IC incorporates an internal regulator that
supplies charge to the gate driver.
Protection features include internally−set soft−start, undervoltage
lockout, cycle−by−cycle current limiting and thermal shutdown.
Additional features include low quiescent current sleep mode and
microprocessor compatible enable pin.
Features
• Peak Current Mode Control with Internal Slope Compensation
• 1.2 V $2% Reference Voltage
• 2 MHz Fixed Frequency Operation
• Wide Input Voltage Range of 3.2 V to 40 V, 45 V Load Dump
• Input Undervoltage Lockout (UVLO)
• Internal Soft−Start
• Low Quiescent Current in Sleep Mode (< 10 mA Typical)
• Cycle−by−Cycle Current Limit Protection
• Hiccup−Mode Overcurrent Protection (OCP)
• Hiccup−Mode Short−Circuit Protection (SCP)
• Thermal Shutdown (TSD)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• This is a Pb−Free Device
Typical Applications
• Small Form Factor Point−of−Load Power Regulation
• Headlamps
• Backlighting
www.onsemi.com
8
1
SOIC−8
D SUFFIX
CASE 751
MARKING
DIAGRAM
8
898031
ALYW
G
1
898031 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
PIN CONNECTIONS
EN 1
ISNS 2
GND 3
GDRV 4
8 VFB
7 VC
6 VIN
5 VDRV
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NCV898031D1R2G SOIC−8 2500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 13
1
Publication Order Number:
NCV898031/D
1 page  
NCV898031
ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol
Conditions
Min Typ Max Unit
GATE DRIVER
Sourcing current
Sinking current
Driving voltage dropout
Driving voltage source current
Backdrive diode voltage drop
Driving voltage
UVLO
Isrc
Isink
Vdrv,do
Idrv
Vd,bd
VDRV
VDRV ≥ 6 V, VDRV − VGDRV = 2 V
VGDRV ≥ 2 V
VIN − VDRV, IvDRV = 25 mA
VIN − VDRV = 1 V
VDRV − VIN, Id,bd = 5 mA
IVDRV = 0.1 − 25 mA
600 800
−
500 600
−
− 0.3 0.6
35 45
−
− − 0.7
6.0 6.3 6.6
mA
mA
V
mA
V
V
Undervoltage lock−out,
Threshold voltage
Vuvlo
VIN falling
2.95 3.05 3.15
V
Undervoltage lock−out,
Hysteresis
Vuvlo,hys
VIN rising
50 150 250 mV
SHORT CIRCUIT PROTECTION
Startup blanking period
Hiccup−mode period
Short circuit threshold voltage
Short circuit delay
THERMAL SHUTDOWN
%tscp,dly
%thcp,dly
%Vscp
tscp
From start of soft−start, Percent of tss
From shutdown to start of soft−start,
Percent of tss
VFB as percent of Vref
From VFB < Vscp to stop switching
100 120 150
70 85 100
60 67 75
− 35 100
%
%
%
ns
Thermal shutdown threshold
Tsd TJ rising
160 170 180
°C
Thermal shutdown hysteresis
Tsd,hys
TJ falling
10 15 20
°C
Thermal shutdown delay
tsd,dly
From TJ > Tsd to stop switching
− − 100 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
5
5 Page 
NCV898031
The total feedback resistance (Rupper + Rlower) should be
in the range of 1 kW – 100 kW.
8. Select Compensator Components
Current Mode control method employed by the
NCV898031 allows the use of a simple, Type II
compensation to optimize the dynamic response according
to system requirements.
9. Select MOSFET(s)
In order to ensure the gate drive voltage does not drop out
the MOSFET(s) chosen must not violate the following
inequality:
Qg(total)
v
Idrv
fs
Where: Qg(total): Total Gate Charge of MOSFET(s) [C]
Idrv: Drive voltage current [A]
fs: Switching Frequency [Hz]
The maximum RMS Current can be calculated as follows:
Ǹ ǒ ǓID(max) +
DWC
IQ(peak)
2
)
ǒDIL1
)
3
DI
L2Ǔ2
*
IQ(peak)ǒDI
L1
)
DIL2Ǔ
where
IQ(peak) + IL1_peak ) IL2_peak
The maximum voltage across the MOSFET will be the
maximum output voltage, which is the higher of the
maximum input voltage and the regulated output voltaged:
VQ(max) + VOUT(max) ) VIN(max)
10. Select Diode
The output diode rectifies the output current. The average
current through diode will be equal to the output current:
ID(avg) + IOUT(max)
Additionally, the diode must block voltage equal to the
higher of the output voltage and the maximum input voltage:
VD(max) + VOUT(max) ) VIN(max)
The maximum power dissipation in the diode can be
calculated as follows:
PD + Vf (max) IOUT(max)
Where: Pd: Power dissipation in the diode [W]
Vf(max): Maximum forward voltage of the diode [V]
www.onsemi.com
11
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet NCV898031.PDF ] | |
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