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PDF 2N5294 Data sheet ( Hoja de datos )
| Número de pieza | 2N5294 | |
| Descripción | Chip Transistor | |
| Fabricantes | ETC | |
| Logotipo |  |
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SPEC SHEET
2N5294
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Dimension
Scribe Line Width
Top Metal
Back Metal
Raper Size
Base
Emitter
1.9mm x 1.9mm
230 ± 20µm
665µm x 315µm
555 µm x 325 µm
50µm
Al
Ti-Ni-Ag
4 inch
Absolute Max Ratings (Ta=25°C)
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Loss (Power Dissipation)
Junction Temperature
Storage Temperature
Symbol
V CBO
V CEO
V EBO
IC
PC
Tj
T stg
Max Ratings
80
70
7
4
36
-65 to +150
Unit
V
V
V
mA
W
°C
°C
(TO-220)
Note
Electrical Characteristics (Ta=25°C)
Item Symbol
Min. Typ. Max. Unit Condition
(TO-220)
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector Saturation
B V CBO
B V CEO
B V EBO
I CBO
I EBO
h FE
V CE(SAT)
80
70
7
-
-
30
-
-
-
-
-
-
-
-
- V IC = 100 µA
- V IC = 200 mA
- V IE = 100 µA
- µA VCB = V
1 mA VEB = 7V
120 - VCE = 4 V, IC = 500mA
1 V IC = 500mA, IB = 50mA
Probing Spec (Ta=25°C)
No. Mode
1 V BE
2 B V CEO
3 I CBO
4 I EBO
5 I CEO
6 h FE
7 V CE(SAT)
Min.
-
70
-
-
-
30
-
Limit
Max.
-
-
-
1
-
120
1
Unit
V
V
µA
mA
µA
-
V
Condition
IB=
I C = 200mA
V CB = V
V EB = 7V
V CE = V
V CE = 4 V, I C = 500A
I C = 500mA, I B = 50mA
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N5294.PDF ] | |
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