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PDF 2N5245 Data sheet ( Hoja de datos )
| Número de pieza | 2N5245 | |
| Descripción | N-Channel RF Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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2N5245
N-Channel RF Amplifier
• This device is designed for HF/VHF mixer/amplifier and applications
where process 50is not adequate. Sufficient gain and low noise for
sensitive receivers.
• Sourced from process 90.
TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, TSTG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
30
-30
10
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS Gate-Source Breakdwon Voltage
IGSS
Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
On Characteristics
IG = 1.0µA, VDS = 0
VGS = 25V, VDS = 0
VDS = 15V, ID = 1.0nA
IDSS
Zero-Gate Voltage Drain Current *
Small Signal Characteristics
VDS = 15V, VGS = 0
gfs Forward Transferconductance
goss
Common- Source Output Conductance
* Pulse Test: Pulse ≤ 300µs
VGS = 0V, VDS = 15V, f = 1.0kHz
VGS = 0V, VDS = 15V, f = 1.0kHz
Min.
-30
-1.0
5
4500
Max. Units
V
-1.0 nA
-0.6 V
15 mA
11000 µmhos
50 µmhos
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5245.PDF ] | |
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