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PDF TGC4704-FC Data sheet ( Hoja de datos )

Número de pieza TGC4704-FC
Descripción 38 - 77 GHz Doubler and Medium Power Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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No Preview Available ! TGC4704-FC Hoja de datos, Descripción, Manual

TGC4704-FC
38 to 77 GHz Doubler and Medium Power Amplifier
Measured Performance
Bias conditions: Vd = 4.0 V, Vg1 = -0.4 V, Vg2= 0.2 V,
Idq = 180 mA Typical
15
Key Features
RF Output Frequency Range: 76–77 GHz
Input Frequency Range: 38.0–38.5 GHz
Two outputs – Out1 (Main) and Out2 (12 dB
coupled from Out1)
14 dBm saturated Output Power
5 dB Conversion Gain
50 dB Input Frequency Isolation at output
Input Return Loss > 8 dB
Output Return Loss > 10 dB
Bias: Vd = 3.75 V, Idq = 180 mA,
Vg1 = -0.4 V Vg2 = +0.2 V Typical
Technology: 0.13 um pHEMT with front-side
Cu/Sn pillars
Chip Dimensions: 3.38 x 1.37 x 0.38 mm
10
5
Input Freq: 38.25 GHz
Input Freq: 38.50 GHz
0
-5
-6 -4 -2 0 2 4 6 8 10 12 14 16
Input Power (dBm)
60 15
55
Output @ 2x Fund Freq
50
( Fund Freq:+11 dBm at
10
Input)
45
40 5
35
Output @ Fund
30
Freq
-
Input @ Fund
25 Freq
Fundamental
2x Fundamental
0
20 -5
30 35 40 45 50 55 60 65 70 75 80 85 90
Frequency (GHz)
Primary Applications
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Automotive Radar
E-Band Communication
Product Description
The TriQuint TGC4704-FC is a flip-chip frequency
doubler. It combines an output medium power
amplifier and a frequency doubler at frequencies in
the automotive radar frequency band. The
TGC4704-FC is designed using TriQuint’s proven
0.13 µm pHEMT process and front-side Cu / Sn
pillar technology for simplified assembly and low
interconnect inductance. Die reliability is
enhanced by using TriQuint’s BCB polymeric
passivation process.
The TGC4704-FC typically provides 14 dBm
saturated output power with 5 dB conversion gain.
Lead-free and RoHS compliant.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2009 © Rev A
1
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 page




TGC4704-FC pdf
TGC4704-FC
Measured Data on Flipped Die on Carrier Board
Bias: Vd = 4.0 V, Idq = 180 mA, Vg1 = -0.4 V, Vg2 = +0.2 V Typical
15
10
5
Input Freq: 38.25 GHz
Input Freq: 38.50 GHz
0
-5
-6 -4 -2 0 2 4 6 8 10 12 14 16
Input Power (dBm)
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60
55
50
45
40
35
Output @ Fund
30
Freq
-
Input @ Fund
25 Freq
20
33 34 35 36 37 38 39 40 41 42 43
Frequency (GHz)
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2009 © Rev A
5
Datasheet pdf - http://www.DataSheet4U.co.kr/

5 Page





TGC4704-FC arduino
TGC4704-FC
Recommended Assembly Diagram
Vg1 Vg2
100 pF
RF In
RF Out2
GND 100 pF (Coupled)
TTGGCC44770044--FFCC DDiiee
(flip-chip bonded)
RF Out1
(Main)
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GND GND
100 pF
GND
Vd
TGC4704-FC data
represented in this
datasheet was
taken using co-
planar waveguide
(CPW) transition on
the substrate and
ground-signal-
ground probes
Die is flip-chip soldered to a 15 mil thick alumina test substrate
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2009 © Rev A
Datasheet pdf - http://www.DataSheet4U.co.kr/

11 Page







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