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PDF TGF2023-10 Data sheet ( Hoja de datos )
| Número de pieza | TGF2023-10 | |
| Descripción | 50 Watt Discrete Power GaN on SiC HEMT | |
| Fabricantes | TriQuint Semiconductor | |
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Hay una vista previa y un enlace de descarga de TGF2023-10 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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TGF2023-10
50 Watt Discrete Power GaN on SiC HEMT
Key Features
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Frequency Range: DC - 18 GHz
46.7 dBm Nominal Psat at 3 GHz
55% Maximum PAE
17.5 dB Nominal Power Gain
Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical
Technology: 0.25 um Power GaN on SiC
Chip Dimensions: 0.82 x 2.48 x 0.10 mm
Primary Applications
• Defense & Aerospace
• Broadband Wireless
Bias conditions: Vd = 28 V, Idq = 1 A, Vg = -3.6 V Typical
www.DataSheet.net/
Product Description
The TriQuint TGF2023-10 is a discrete 10 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-10 is designed using
TriQuint’s proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-10 typically provides 46.7 dBm of
saturated output power with power gain of 17.8 dB
at 3 GHz. The maximum power added efficiency
is 55% which makes the TGF2023-10 appropriate
for high efficiency applications.
Lead-free and RoHS compliant
.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Apr 2011 © Rev D
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
TGF2023-10
Median Lifetime vs Channel Temperature
www.DataSheet.net/
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Apr 2011 © Rev D
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TGF2023-10.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TGF2023-10 | 50 Watt Discrete Power GaN on SiC HEMT | TriQuint Semiconductor |
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