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PDF T1G6000528-Q3 Data sheet ( Hoja de datos )
| Número de pieza | T1G6000528-Q3 | |
| Descripción | GaN RF Power Transistor | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Applications
• Wideband and narrowband defense and
commercial communication systems
–– General Purpose RF Power
–– Jammers
–– Radar
–– Professional radio systems
–– WiMAX
–– Wideband amplifiers
–– Test instrumentation
–– Cellular infrastructure
Available Package
Product Features
• Frequency: DC to 6 GHz
• Linear Gain: >10 dB at 6 GHz
• Operating Voltage: 28 V
• Output Power (P3dB): >7 W at 6 GHz
• Lead-free and RoHS compliant
• Low thermal resistance package
Package Information
Package Type
Description
Q3 5.0mm x 4.0mm ceramic air
cavity straight lead package
Base
CuMo
www.DataSheet.net/
General Description
The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 6 GHz
and typically provides >10 dB gain at 6 GHz. The
device is constructed with TriQuint’s proven 0.25
µm production process, which features advanced
field plate techniques to optimize power and effi-
ciency at high drain bias operating conditions. This
optimization can potentially lower system costs in
terms of fewer amplifier line-ups and lower thermal
management costs.
Ordering Information
Material No.
Part No.
1075579
T1G6000528-Q3
1081733
T1G6000528-Q3-
EVB3
Description
Packaged part
Narrowband
3.0 to 3.5 GHz
evaluation
board
ECCN
EAR99
EAR99
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
–1–
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Device Characterization Data
S-Parameter Smith Chart
T1G6000528-Q3
VDS=28V, IDQ=50 mA
j10
j5 j20
j2
6000MHz
j50
Small-Signal Gain
02
−j2
5 10 20 50
6000MHz
S22
S11
∞
100MHz
−j50
−j5
−j10
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−j20
Maximum Stable Gain of T1G6000528-Q3
VDS=28V, IDQ=50 mA
Gmax vs. Frequency
35
Max Stable Gain
30
25
20
15
10
5
0
0
1000
2000
3000
4000
5000
6000
Frequency (MHz)
The data was taken in a package fixture. The reference planes are at the package interface.
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
–5–
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Performance: 3.0 to 3.5 GHz
T1G6000528-Q3 P3dB Compression in Narrowband Fixture
T12G86V00, 205850V2m8, −5AQ0m;32AP0,320d0Bμ0µsCesoecmc–p−r2e2s00s%%iondduintuyNt−ycay-rrccolyewc−pluBelaspnedulFsixeture
70
Drain Eff. (%)
PAE (%)
68
66
64
62
60
58
56
54
52
530000
15
14.5
3050
3100
3150
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3200 3250 3300
Frequency (MHz)
3350
3400
3450
3500
T1G6000T512G2868V0-0,Q2058530V2m8,P−5A3Q0md;32ABP0,3C20d0Bμo0sµCmesoecmpc–pr−er2e2ss00ss%%iioonddnuinutyiNt−nyca-yrNcrcolyaewcr−plreuBolaspwneudblFsaiexntudre Fixture
Power (W)
Gain (dB)
14
13.5
13
12.5
12
11.5
11
10.5
130000
3050
3100
3150
3200 3250 3300
Frequency (MHz)
3350
3400
3450
3500
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
– 11 –
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet T1G6000528-Q3.PDF ] | |
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