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PDF TGL2201 Data sheet ( Hoja de datos )

Número de pieza TGL2201
Descripción Wideband VPIN Limiter
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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No Preview Available ! TGL2201 Hoja de datos, Descripción, Manual

Wideband Dual Stage VPIN Limiter
Product Data Sheet
November 15, 2006
TGL2201
Key Features
• 3-25 GHz Passive, High Isolation Limiter
• Low Loss < 0.5 dB , X-band
• Good Return Loss > 15 dB
• Flat Leakage < 18 dBm
• Input Power CW Survivability > 5W
• Integrated DC Block on both input and output
• Chip Dimensions: 1.1 x 1.1 x 0.1 mm
Primary Applications
• Military Radar
• LNA Receiver Chain Protection
Fixtured Measured Performance
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
0
26
24
22
20
18
16
14
12
10
8
9
0
-3
-6
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-9
-12
-15
-18
-21
-24
3 6 9 12 15 18 21 24 27 30
Frequency (GHz)
Data taken @ 10 GHz
12 15 18 21 24 27 30 33 36
Input Power (dBm)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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TGL2201 pdf
Assembly Process Notes
Product Data Sheet
November 15, 2006
TGL2201
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
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Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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