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PDF TGA4916 Data sheet ( Hoja de datos )
| Número de pieza | TGA4916 | |
| Descripción | 7 Watt Ka Band High Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TGA4916 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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7 Watt Ka-Band HPA
TGA4916
Key Features
• Frequency Range: 29 - 31 GHz
• 38.5 dBm Nominal Psat, 38 dBm Nominal
P1dB
• Gain: 21 dB
• Return Losses: -10 dB
• Bias: Vd = 6 V, Idq = 3.2 A, Vg = -0.7 V
Typical, Id under RF drive = 6 A
• Technology: 3MI 0.15 um Power pHEMT
• Chip Dimensions: 3.86 x 5.71 x 0.05 mm
Measured Performance
Bias conditions: Vd = 6 V, Idq = 3200 mA, Vg = -0.7 V
Typical
Primary Application
• Ka-Band VSAT
Product Description
www.DataSheet.net/
The TriQuint TGA4916 is a compact 7 Watt High
Power Amplifier for Ka-band applications. The part
is designed using TriQuint’s proven standard 0.15
um gate Power pHEMT production process. The
TGA4916 provides a nominal 38.5 dBm of output
power at an input power level of 19 dBm with a
small signal gain of 21 dB.
The part is ideally suited for low cost emerging
markets such as base station transmitters for
satellite ground terminals and point to point radio.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Sept 2010 © Rev C
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Measured Data
TGA4916
Bias conditions: Vd = 6 V, Idq = 3200 mA, Vg = -0.7 V Typical
www.DataSheet.net/
0
S11
-4
S22
-8
-12
-16
-20
20
24 28 32
Frequency (GHz)
36
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Sept 2010 © Rev C
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
TGA4916
Recommended Assembly Diagram
Vd 1,2,3
Top
Vg 1,2,3
Top + Bot
20
1F
0.1 0.1 0.1
uF uF uF
1F
RF IN
www.DataSheet.net/
RF OUT
0.1 0.1 0.1
uF uF uF
Vd 1,2,3
Bottom
1F
1/ Bond only to hatched bond pads, designated in blue. Bonding to other areas may damage MMIC.
2/ For optimal performance, RF Input and RF Output should be bonded with 4 wires, using wedge
bonding, or a gold ribbon. Alternatively, 3 ball bonds can be used.
3/ All DC connections from 0.1 uF decoupling caps to chip should have 2 bonds.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Sept 2010 © Rev C
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA4916.PDF ] | |
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