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PDF TGA4906 Data sheet ( Hoja de datos )
| Número de pieza | TGA4906 | |
| Descripción | 4 Watt Ka Band High Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TGA4906 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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4 Watt Ka-Band HPA
TGA4906
Key Features
• Frequency Range: 28 - 31 GHz
• 36 dBm Nominal Psat
• Gain: 24 dB
• Return Loss: -8 dB
• Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
• Technology: 3MI 0.15 um Power pHEMT
• Chip Dimensions: 2.98 x 2.90 x 0.05 mm
Measured Performance
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
38
Primary Applications
• Ka-Band VSAT
37
36
35
34
33
32
31
30
28
28.5
29 29.5 30
Frequency (GHz)
Psat
P1dB
30.5 31
30
27
24
21
18
15
12
9
6
3
0
28
28.5
29 29.5 30
Frequency (GHz)
0
-3
-6
-9
-12
-15
-18
-21
Gain -24
IRL
ORL
-27
-30
30.5 31
Product Description
www.DataSheet.net/
The TriQuint TGA4906 is a compact 4 Watt High
Power Amplifier for Ka-band applications. The part
is designed using TriQuint’s proven standard 0.15
um gate Power pHEMT production process. The
TGA4906 provides a nominal 36 dBm of output
power at an input power level of 14 dBm with a
small signal gain of 24 dB.
The part is ideally suited for low cost emerging
markets such as base station transmitters for
satellite ground terminals and point to point radio.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Sept 2010 © Rev B
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Measured Data
TGA4906
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
30
27
24
21
18
15
12
9
6
3
0
20 22 24 26 28 30 32 34 36
Frequency (GHz)
www.DataSheet.net/
0
-3
-6
-9
-12
-15
-18
-21
-24
-27 IRL
ORL
-30
20 22 24 26 28 30 32 34 36
Frequency (GHz)
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Sept 2010 © Rev B
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
Mechanical Drawing
TGA4906
22..9800
23
45
2.79
1.45
1
6 1.45
0.10
0.00
10 9
87
0.11
www.DataSheet.net/
Units: millimeters
Thickness: 0.05
Die x,y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad #1
RF In
Bond Pad #2
Vd_1 top
Bond Pad #3 Vg_1,2,3 top
Bond Pad #4
Vd_2 top
Bond Pad #5
Vd_3 top
0.125 x 0.200
0.150 x 0.100
0.100 x 0.100
0.225 x 0.125
0.225 x 0.125
Bond Pad #6
Bond Pad #7
Bond Pad #8
Bond Pad #9
Bond Pad #10
RF Out
Vd_3 bottom
Vd_2 bottom
Vg_1,2,3 bottom
Vd_1 bottom
0.125 x 0.200
0.225 x 0.125
0.225 x 0.125
0.100 x 0.100
0.150 x 0.100
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Sept 2010 © Rev B
11
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA4906.PDF ] | |
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