DataSheet.es    


PDF TGA4705-FC Data sheet ( Hoja de datos )

Número de pieza TGA4705-FC
Descripción 77 GHz Flip-Chip Low Noise Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de TGA4705-FC (archivo pdf) en la parte inferior de esta página.


Total 11 Páginas

No Preview Available ! TGA4705-FC Hoja de datos, Descripción, Manual

TGA4705-FC
77 GHz Flip-Chip Low Noise Amplifier
Key Features
Frequency Range: 72 - 80 GHz
Noise Figure: 5 dB at 77 GHz
Gain: 23 dB
Bias: Vd = 2.5 V, Id = 60 mA, Vg = +0.18 V
Typical
Technology: 0.13 um pHEMT with front-side
Cu/Sn pillars
Chip Dimensions: 2.24 x 1.27 x 0.38 mm
Measured Performance
Bias conditions: Vd = 2 V, Id = 60 mA
10
Primary Applications
Automotive RADAR
8
6
4
2
0
75
30
76 77 78 79
Frequency (GHz)
Bias conditions: Vd = 2.5 V, Id = 60 mA
80
20
10 Gain
IRL
0 ORL
Product Description
www.DataSheet.net/
The TriQuint TGA4705-FC is a flip-chip low noise
amplifier designed to operate at frequencies that
target the automotive RADAR market. The
TGA4705-FC is designed using TriQuint’s proven
0.13 µm pHEMT process and front-side Cu / Sn
pillar technology for reduced source inductance
and superior noise performance at frequencies of
72 80 GHz. Die reliability is enhanced by using
TriQuint’s BCB polymeric passivation process.
The TGA4705-FC is a low noise amplifier that
typically provides 23 dB small signal gain with 5 dB
noise figure at 77 GHz. The TGA4705-FC is an
excellent choice for applications requiring low
noise in receive chain architectures.
Lead-free and RoHS compliant.
-10
-20
72 73 74 75 76 77 78 79 80 81 82
Frequency (GHz)
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
ApNroilv2e0m1b2e©r 2R0e0v9E© Rev D
1
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 page




TGA4705-FC pdf
TGA4705-FC
Measured Data on Face-down (flipped) Die on Carrier Board
Bias conditions: Vd = 2 V, Id = 60 mA
10
8
6
4
2
0
75
76 77 78 79
Frequency (GHz)
www.DataSheet.net/
80
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
ApNroilv2e0m1b2e©r 2R0e0v9E© Rev D
5
Datasheet pdf - http://www.DataSheet4U.co.kr/

5 Page





TGA4705-FC arduino
Assembly Notes
TGA4705-FC
Component placement and die attach assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
Cu pillars on die are 65 um tall with a 22 um tall Sn solder cap.
Recommended board metallization is evaporated TiW followed by nickel/gold at pillar attach interface. Ni is the adhesion layer for
the solder and the gold keeps the Ni from oxidizing. The Au should be kept to a minimum to avoid embrittlement; suggested Au /
Sn mass ratio must not exceed 8%.
Au metallization is not recommended on traces due to solder wicking and consumption concerns. If Au traces are used, a physical
solder barrier must be applied or designed into the pad area of the board. The barrier must be sufficient to keep the solder from
undercutting the barrier.
Reflow process assembly notes:
Minimum alloying temperatures 245 °C.
Repeating reflow cycles is not recommended due to Sn consumption on the first reflow cycle.
An alloy station or conveyor furnace with an inert atmosphere such as N2 should be used.
• Dip copper pillars in “no-clean flip chip” flux prior to solder attach. Suggest using a high temperature flux. Avoid exposing entire
die to flux.
If screen printing flux, use small apertures and minimize volume of flux applied.
Coefficient of thermal expansion matching between the MMIC and the substrate/board is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Suggested reflow will depend on board material and density.
www.DataSheet.net/
Typical Reflow Profiles for TriQuint Cu / Sn Pillars
Process
Ramp-up Rate
Flux Activation Time and Temperature
Time above Melting Point (245 °C)
Max Peak Temperature
Time within 5 °C of Peak Temperature
Ramp-down Rate
Sn Reflow
3 °C/sec
60 120 sec @ 140 160 °C
60 150 sec
300 °C
10 20 sec
4 6 °C/sec
Ordering Information
Part
TGA4705-FC
Package Style
GaAs MMIC Die
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
ApNroilv2e0m1b2e©r 2R0e0v9E© Rev D
Datasheet pdf - http://www.DataSheet4U.co.kr/

11 Page







PáginasTotal 11 Páginas
PDF Descargar[ Datasheet TGA4705-FC.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
TGA4705-FC77 GHz Flip-Chip Low Noise AmplifierTriQuint Semiconductor
TriQuint Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar