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PDF TGA4514 Data sheet ( Hoja de datos )
| Número de pieza | TGA4514 | |
| Descripción | 2 Watt Ka-Band Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TGA4514
2 Watt Ka-Band Power Amplifier
Key Features
• Typical Frequency Range: 31 - 35 GHz
• 33.5 dBm Nominal Psat @ Vd = 7V
• 31.5 dBm Nominal P1dB
• IMD3: 31dBc at Pout/tone=22dBm
• 18 dB Nominal Gain
• Bias 6 - 7 V, 1150 mA
• 0.25 um 2MI pHEMT Technology
• Chip Dimensions 4.0 x 3.2 x 0.1 mm
• (0.161 x 0.128 x 0.004) in
Measured Performance
Bias Conditions: Vd = 6 V, Id = 1150 mA
30
GAIN
20
10
0 ORL
-10
-20 IRL
-30
28 29 30 31 32 33 34 35 36 37 38
Frequency (GHz)
35
34
33
32
31
30
29
28
30
Bias Conditions: Vd = 6/7 V, Id = 1150 mA
Vd = 7 V
Vd = 6 V
31 32 33 34 35 36
Frequency (GHz)
37
Primary Applications
• Point-to-Point Radio
• Military Radar Systems
• Ka Band Sat-Com
www.DataSheet.net/
Product Description
The TriQuint TGA4514 is Power Amplifier for Ka-
band applications. The part is designed using
TriQuint’s proven standard 0.25 um gate Power
pHEMT production process.
The TGA4514 provides a nominal 33.5 dBm of
output power at an input power level of 20 dBm
with a small signal gain of 18 dB. Nominal IMD3 is
31dBc at Pout/tone of 22 dBm.
The part is ideally suited for low cost markets such
as Point-to-Point Radio and Ka-band Sat-Com.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
July 2009 © Rev A
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Measured Data
TGA4514
22 Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp.
20
18
16
14
12
10
28 29 30 31 32 33 34 35 36 37 38
Fre que ncy (GHz)
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35 Bias Conditions: Vd = 6/7 V, Id = 1150 mA, Room Temp.
34 Vd = 7 V
33
32 Vd = 6 V
31
30
29
28
30 31 32 33 34 35 36 37
Frequency (GHz)
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
July 2009 © Rev A
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
Mechanical Drawing
TGA4514
www.DataSheet.net/
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
11
July 2009 © Rev A
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA4514.PDF ] | |
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