|
|
PDF RFHA1025 Data sheet ( Hoja de datos )
| Número de pieza | RFHA1025 | |
| Descripción | 280W GaN WIDEBAND PULSED POWER AMPLIFIER | |
| Fabricantes | RFMD | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RFHA1025 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
RFHA1025
280W GaN
Wideband
Pulsed Power
Amplifier
RFHA1025
280W GaN WIDEBAND PULSED POWER
AMPLIFIER
Package: Flanged Ceramic, 2-Pin
Features
Wideband Operation: 0.96GHz to
1.215GHz
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Supports Multiple Pulse
Conditions
10% to 20% Duty Cycle
100s to 1ms Pulse Width
Integrated Matching
Components for High Terminal
Impedances
50V Operation Typical
Performance
Output Pulsed Power 280W
Pulse Width 100S,
Duty Cycle 10%
Small Signal Gain 17dB
High Efficiency 55%
-40°C to 85°C Operating
Temperature
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
RF IN
VG
Pin 1 (CUT )
GND
BASE
RF OUT
VD
Pin 2
Functional Block Diagram
Product Description
www.DataSheet.net/
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density gallium nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Ordering Information
RFHA1025S2
RFHA1025SB
RFHA1025SQ
RFHA1025SR
RFHA1025TR13
RFHA1025PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
Fully assembled evaluation board 0.96GHz to .215GHz;50V
DS120613
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
RFHA1025
Typical Performance in Standard Fixed Tuned Test Fixture
(T = 25°C, unless noted)
20
19
18
17
16
15
14
13
12
47
Gain/Efficiency versus POUT, Freq = 1100MHz
(Pulsed 10% duty cycle, PW = 100μS, VD = 50V, IDQ = 440mA)
Gain
Drain Eff
48 49 50 51 52 53 54
POUT , Output Power (dBm)
65
60
55
50
45
40
35
30
25
55
POUT/DE versus Pulse Width, Freq = 1100MHz
(Pulsed 10% duty cycle, VD = 50V, IDQ = 440mA)
400
375
350
325
Output Power
Drain Eff
300
275
250
10
100
Pulse Width (μsec)
1000
70
65
60
55
50
45
40
POUT/DE versus Duty Cycle, Freq = 1100MHz
(Pulsed, PW = 100μS, VD = 50V, IDQ = 440mA)
375
350
325
300
275
250 Output Power
Drain Eff
225
10 15 20 25 30 35 40 45
Duty Cycle (%)
70
65
60
55
50
45
40
50
1200
1000
www.DataSheet.net/
800
600
400
200
0
0
Pulse Power Dissipation DeͲrating Curve
(Based on Maximum package temperature and Rth)
1mS Pulse Width, 10% Duty Cycle
100ʅS Pulse Width, 10% Duty Cycle
20 40 60 80 100 120 140
Maximum Case Temperature (°C)
DS120613
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 10
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet RFHA1025.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RFHA1020 | 280W GaN WIDE-BAND PULSED POWER AMPLIFIER |  RF Micro Devices |
| RFHA1023 | 225W GaN WIDE-BAND PULSED POWER AMPLIFIER | RF Micro Devices |
| RFHA1025 | 280W GaN WIDEBAND PULSED POWER AMPLIFIER | RFMD |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |