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PDF TGA2522-SM Data sheet ( Hoja de datos )
| Número de pieza | TGA2522-SM | |
| Descripción | 17- 24 GHz Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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TGA2522-SM
17- 24 GHz Power Amplifier
Measured Performance
Bias conditions: Vd = 5 V, Id = 712 mA , Vg = -0.5 V Typical
Key Features
• Frequency Range 17 GHz to 24 GHz.
• 28 dBm Output Psat, 26 dBm P1dB, typical.
• 35 dBm Output TOI.
• 17 dB Typical Gain.
• Integrated power detection with 30 dB
dynamic range.
• High ESD tolerance.
• Dimensions: 4.0 x 4.0 x 0.85 mm
• Bias conditions: Vd = 5 V, Id = 712 mA,
Vg = -0.5 V, typical.
Primary Applications
• Point-to-Point Radio
•www.DataSheet.net/ Point-to-Multipoint Communications
Product Description
The TriQuint TGA2522-SM is a three stage HPA
MMIC design using TriQuint’s proven 0.25 um
Power pHEMT process. The TGA2522-SM is
designed to support a variety of millimeter wave
applications including point-to-point digital radio
and other K band linear gain applications.
The TGA2522-SM provides 26 dBm nominal
output power at 1dB compression across 17-24 GHz.
Typical small signal gain is 17 dB at 17 GHz and
18 dB at 24 GHz.
The TGA2522-SM requires minimum off-chip
components. Each device is DC and RF tested for key
parameters. The device is available in a 4 x 4 mm
plastic QFN package.
RoHS and Lead-Free compliant. Evaluation boards
available on request.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev D
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Measured Data
TGA2522-SM
Bias conditions: Vd = 5 V, Id = 712 mA, Vg = -0.5 V Typical
www.DataSheet.net/
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev D
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
Package Pinout
TGA2522-SM
21
Pin
2
12
6,20
18
7,19
8
Symbol
RF In
RF Out
Vg1,2
Vg3
Vd1,2
Vd3
Description
Input, matched to 50 ohms.
Output, matched to 50 ohms.
www.DataSheet.net/
Gate voltage for amplifier’s input and 2nd stage. Must be
biased from both sides. 1/
Gate voltage for amplifier’s final stage. 1/
Drain voltage for amplifier’s input and 2nd stage. Must be
biased from both sides. 1/
Drain voltage for amplifier’s final stage. 1/
16
17
5,13
1, 3,4,11,14,15
9,10
21
VDET
VREF
GND
NC
NC
GND
Reference diode output voltage.
Detector diode output voltage. Varies with RF output
power.
Connected to 21 internally. Must be grounded to the PCB.
See ‘Recommended Land Pattern’.
No internal connection. Must be grounded to the PCB.
See ‘Recommended Land Pattern’.
No internal connection. Can be grounded or left open on
the PCB.
Backside paddle. Multiple vias on the PCB should be
employed to minimize inductance and thermal resistance.
See ‘Recommended Land Pattern’.
1/ Bias network required. See ‘Recommended Application Circuit’.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev D
11
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet TGA2522-SM.PDF ] | |
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