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PDF TGA2510 Data sheet ( Hoja de datos )
| Número de pieza | TGA2510 | |
| Descripción | 2 Watt Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TGA2510 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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Product Data Sheet
December 3, 2009
Ku Band, 2 Watt Power Amplifier
TGA2510
Preliminary Measured Performance
Bias Conditions: Vd=7.5V Id=650mA
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Key Features and Performance
• 34 dBm Midband Psat
• 26 dB Nominal Gain
• 7 dB Typical Input Return Loss
• 12 dB Typical Output Return Loss
• 12.5 - 17 GHz Frequency Range
• Directional Power Detector with
Reference
• 0.25µm pHEMT 3MI Technology
• Bias Conditions: 7.5V, 650mA
• Chip Dimensions:
2.02 x 1.38 x 0.10 mm
(0.080 x 0.054 x 0.004 inches)
Primary Applications
• VSAT
• Point to Point
Note: Datasheet is subject to change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Product Data Sheet
December 3, 2009
Typical Fixtured Performance
Idq=650mA
TGA2510
www.DataSheet.net/
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
Product Data Sheet
December 3, 2009
TGA2510
Assembly Process Notes
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnectwww.DataSheet.net/ technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TGA2510.PDF ] | |
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