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PDF TGA2506 Data sheet ( Hoja de datos )

Número de pieza TGA2506
Descripción 12-18 GHz Ku-Band 2-Stage Driver Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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No Preview Available ! TGA2506 Hoja de datos, Descripción, Manual

Product Data Sheet
August 5, 2008
12-18 GHz Ku-Band 2-Stage Driver Amplifier
TGA2506
Key Features
12-18 GHz Bandwidth
17 dB Nominal Gain
> 14 dBm P1dB
Bias: 5,6,7 V, 40 ± 10% mA Self Bias
0.5 um 3MI mmW pHEMT Technology
Chip Dimensions: 1.19 x 0.83 x 0.1 mm
(0.047 x 0.031 x 0.004) in
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 40 mA
Primary Applications
Point to Point Radio
20 IRL 0 Military Ku-Band
18
Gain
-5 Space Ku-Band
16 ORL -10 VSAT
14
12
-15
-20
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10 -25
8 -30
8 10 12 14 16 18 20 22
Frequency (GHz)
16
14
12
10
8
6
4
2
0
11 12 13 14 15 16 17 18
Frequency (GHz)
Note: Datasheet is subject to change without notice.
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/

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TGA2506 pdf
Product Data Sheet
August 5, 2008
TGA2506
Preliminary Measured Data
0
-5
-10
-15
-20
-25
-30
-35
-40
11
Bias Conditions: Vd =5, 6, 7 V, Id = 40 mA
5V
7V
6V
12 13 14 15 16 17 18
Frequency (GHz)
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19
0
-5
-10 5V
-15 6V
7V
-20
-25
-30
-35
-40
11 12 13 14 15 16 17 18 19
Frequency (GHz)
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/

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TGA2506 arduino
Product Data Sheet
August 5, 2008
TGA2506
Assembly Process Notes
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300ƒ C (30 seconds max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
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Maximum stage temperature is 200ƒ C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/

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