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Número de pieza | TGA2501-TS | |
Descripción | 6 - 18 GHz 2.8 Watt Power Amplifier | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TGA2501-TS (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! TGA2501-TS
6 - 18 GHz 2.8 Watt Power Amplifier
Key Features and Performance
• 34.5 dBm Midband Pout
• 24 dB Nominal Gain
• 10 dB Typical Input Return Loss
• 5 dB Typical Output Return Loss
• Bias Conditions: 8 V @ 1.2 A
• 0.25 µm Ku pHEMT 2MI
• Thermal Spreader dimensions:
4.445 x 3.023 mm
Preliminary Measured Performance
Bias Conditions: VD = 8 V ID = 1.2 A
Primary Applications
• X-Ku Point-to-Point
• ECCM
Product Description
TriQuint’s TGA2501-TS is a wideband power
amplifier fabricated on TriQuint’s production-
www.DataSheet.net/ released 0.25um power pHEMT process.
Operating from 6 to 18Ghz, it achieves
34.5dBm of saturated output power, 25%
efficiency and 24dB of small signal gain. The
TGA2501-TS is pre-assembled to a CuMo
carrier (or Thermal Spreader) for improved
thermal management and ease of
handling. Using AuSn solder and a vacuum
reflow process, attachment is made with
minimal voiding and screened via x-ray to
ensure acceptable attach.
Fully matched to 50 ohms, RoHS compliant
and with integrated DC blocking caps on both
I/O ports, the TGA2501-TS is ideally suited to
support both commercial and defense related
opportunities.
The TGA2501-TS is 100% DC and RF tested
on-wafer to ensure compliance to
performance specifications.
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2011 © Rev B
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page Fixtured Performance
TGA2501-TS
www.DataSheet.net/
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2011 © Rev B
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page TGA2501-TS
Chip Assembly & Bonding Diagram
www.DataSheet.net/
1uF or larger capacitors (not shown) should be on the gate and drain line.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
November 2011 © Rev B
11
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet TGA2501-TS.PDF ] |
Número de pieza | Descripción | Fabricantes |
TGA2501-TS | 6 - 18 GHz 2.8 Watt Power Amplifier | TriQuint Semiconductor |
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