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PDF FTP06N65 Data sheet ( Hoja de datos )
| Número de pieza | FTP06N65 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | IPS | |
| Logotipo |  |
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N-Channel MOSFET
Applications:
• Adaptor
• LCD Panel Power
Features:
• Lead Free
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP06N65
FTA06N65
PACKAGE
TO-220
TO-220F
BRAND
FTP06N65
FTA06N65
FTP06N65
FTA06N65
VDSS
650V
RDS(ON) (Max.)
1.25 Ω
ID
6.0A
G DS
TO-220
Not to Scale
G DS
TO-220F
Not to Scale
G
D
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP06N65 FTA06N65
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
www.DataSheet.net/
(NOTE *2)
650
6.0 6.0*
Figure 3
Figure 6
125 31
1.00 0.25
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=16.6 mH, ID=6.2 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
320
Figure 8
3.0
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
FTP06N65 FTA06N65
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
1.0
62
4.0
62
©2006 InPower Semiconductor Co., Ltd.
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
FTP06N65/FTA06N65 REV. A April. 2006
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
1000
100
Figure 6. Maximum Peak Current Capability
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0----–-----T---C---
125
10
VGS = 10V
1
1E-6
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
20 PULSE DURATION = 250 µs
18 DUTY CYCLE = 0.5% MAX
VDS = 10 V
16
14
12
10
8
6 +150 oC
4 +25 oC
2 -55 oC
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, Gate-to-Source Voltage (V)
6.5
100.0
Figure8. Unclamped Inductive
Switching Capability
10.0
STARTING TJ = 150 oC
1.0
STARTING TJ = 25 oC
www.DataSheet.net/
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0.1
1E-6
10E-6 100E-6 1E-3
10E-3 100E-3
tAV, Time in Avalanche (s)
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
3.2
3.0 PULSE DURATION = 2 µs
2.8
DUTY CYCLE = 0.5% MAX
TC=25°C
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
5 10
VGS = 10V
15
20
25
ID, Drain Current (A)
©2006 InPower Semiconductor Co., Ltd.
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75 -50 -25
0
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 6.0A
25 50 75 100 125 150
TJ, Junction Temperature (oC)
FTP06N65/FTA06N65 REV. A April. 2006
Page 5 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FTP06N65.PDF ] | |
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