PDF 2N5114 Data sheet ( Hoja de datos )

Número de pieza	2N5114
Descripción	SINGLE P-CHANNEL JFET
Fabricantes	Linear Integrated Systems
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No Preview Available ! Linear Integrated Systems 2N5114 SERIES SINGLE P-CHANNEL JFET FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE 75Ω LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS1 6pF @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to 200°C Junction Operating Temperature -55 to 200°C Maximum Power Dissipation Continuous Power Dissipation 500mW Maximum Currents Gate Current -50mA Maximum Voltages Gate to Drain 30V Gate to Source 30V TO-18 BOTTOM VIEW G 2 3D S1 STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP 2N5114 2N5115 2N5116 MIN MAX MIN MAX MIN MAX BVGSS Gate to Source Breakdown Voltage 30 30 30 VGS(off) Gate to Source Cutoff Voltage 5 10 3 6 1 4 VGS(F) Gate to Source Forward Voltage -0.7 -1 -1 -1 -1.0 -1.3 VDS(on) Drain to Source On Voltage -0.7 -0.8 -0.5 -0.6 IDSS Drain to Source Saturation Current2 -30 -90 -15 -60 -5 -25 IGSS Gate Leakage Current IG Gate Operating Current 5 500 500 500 -5 -10 -500 ID(off) Drain Cutoff Current -10 -500 -10 -500 rDS(on) Drain to Source On Resistance 75 100 150 UNIT V mA pA Ω CONDITIONS IG = 1µA, VDS = 0V VDS = -15V, ID = -1nA IG = -1mA, VDS = 0V VGS = 0V, ID = -15mA VGS = 0V, ID = -7mA VGS = 0V, ID = -3mA VDS = -18V, VGS = 0V VDS = -15V, VGS = 0V VGS = 20V, VDS = 0V VDG = -15V, ID = -1mA VDS = -15V, VGS = 12V VDS = -15V, VGS = 7V VDS = -15V, VGS = 5V VGS = 0V, ID = -1mA Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 1 page

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