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PDF 2N5087 Data sheet ( Hoja de datos )
| Número de pieza | 2N5087 | |
| Descripción | PNP General Purpose Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
• This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
3
1 TO-92
1. Emitter 2. Base 3. Collector
2
1
SOT-23
Mark: 2Q
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector current
- Continuous
TJ, Tstg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-50
-50
-3.0
-100
-55 ~ +150
Units
V
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
ICEO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Collector Cutoff Current
ICBO
Emitter Cutoff Current
On Characteristics
IC = -1.0mA, IB = 0
IC = -100µA, IE = 0
VCB = -10V, IE = 0
VCB = -35V, IE = 0
VEB = -3.0V, IC = 0
hFE DC Current Gain
IC = -100µA, VCE = -5.0V
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
5086
5087
5086
5087
5086
5087
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
IC = -10mA, IB = -1.0mA
IC = -1.0mA, VCE = -5.0V
fT
Current Gain Bandwidth Product
IC = -500µA, VCE = -5.0V, f = 20MHz
Ccb Collector-Base Capacitance
VCB = -5.0V, IE = 0, f = 100KHz
hfe Small-Signal Current Gain
IC = -1.0mA, VCE = -5.0V,
f = 1.0KHz
5086
5087
NF Noise Figure
IC = -100µA, VCE = -5.0V
RS = 3.0kΩ, f = 1.0KHz
5086
5087
Min.
-50
-50
150
250
150
250
150
250
40
150
250
Max.
-10
-50
-50
500
800
-0.3
-0.85
4.0
600
900
3.0
2.0
Units
V
V
nA
nA
nA
V
V
MHz
pF
dB
dB
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
IC = -20µA, VCE = -5.0V
RS = 10kΩ
f = 10Hz to 15.7KHz
5086
5087
3.0 dB
2.0 dB
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
1 page  
Typical Characteristics (Continuce)
1,000,000
100,000
1.0 dB
4.06.0d1Bd0BdB
2.0 dB
10,000
1,000
4.0 dB
106.d0BdB
VCE = - 5V
f = 10 kHz
BANDWIDTH = 1.5 kHz
100
0.001
0.01
0.1
I C - COLLECTOR CURRENT (mA)
1
Figure 13. Contours of Constanct
Narrow Band Noise Figure
1,000,000
100,000
10,000
1,000
5.08.d01Bd2BdB
3.0 dB
V CE = - 5V
f = 100 Hz
BANDWIDTH = 15 Hz
128.d05B.d0BdB
100
0.001
0.01
0.1
I C - COLLECTOR CURRENT (mA)
1
Figure 14. Contours of Constanct
Narrow Band Noise Figure
1,000,000
100,000
10,000
1,000
4.06.d01B0dBdB
V CE = - 5V
f = 1.0 kHz
BANDWIDTH = 150 Hz
4.0 dB
106d.0BdB
100
0.001
0.01 0.1
I C - COLLECTOR CURRENT (mA)
Figure 15. BContours of Constant
Narrow Band Noise Figure
1
10,000
5,000
2,000
1,000
500
4.0 dB
6.0 dB
V CE = - 5V
f = 10 MHz
200 BANDWIDTH
= - 2 kHz
100
0.01
0.1
1
I C - COLLECTOR CURRENT (mA)
Figure 16. Contours of Constant
Narrow Band Noisd Figure
10
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 2N5087.PDF ] | |
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