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PDF T1G6001528-Q3 Data sheet ( Hoja de datos )
| Número de pieza | T1G6001528-Q3 | |
| Descripción | 18 W GaN RF Power Transistor | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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T1G6001528-Q3
DC – 6 GHz 18 W GaN RF Power Transistor
Applications
• General Purpose RF Power
• Jammers
• Military and Civilian Radar
• Professional and Military radio systems
• Wideband amplifiers
• Test instrumentation
• Avionics
Product Features
• Frequency: DC to 6 GHz
• Output Power (P3dB): 18 W at 6 GHz
• Linear Gain: >10 dB at 6 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
Functional Block Diagram
1
www.DataSheet.net/
2
General Description
The TriQuint T1G6001528-Q3 is a 18 W (P3dB)
discrete GaN on SiC HEMT which operates from DC
to 6 GHz and typically provides >10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven 0.25
μm process, which features advanced field plate
techniques to optimize power and efficiency at high
drain bias operating conditions. This optimization can
potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management costs.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pin Configuration
Pin #
1
2
Flange
Symbol
Vd/RF OUT
Vg/RF IN
Source
Ordering Information
Preliminary Data Sheet: Rev - A 06/14/2011
© 2011 TriQuint Semiconductor, Inc.
Part No.
ECCN Description
T1G6001528-Q3
EAR99 Packaged Transistor
T1G6001528-Q3 EVB1 EAR99 5-6 GHz Eval Board
- 1 of 15-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
T1G6001528-Q3
DC – 6 GHz 18 W GaN RF Power Transistor
Load Pull Data
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency (ZLcmp).
Test conditions: VDS=28V, IDQ= 50mA
Freq. [MHz]
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
3600
3700
3800
3900
4000
4100
4200
4300
4400
4500
4600
4700
4800
4900
5000
5100
5200
5300
5400
5500
5600
5700
5800
5900
6000
Real(ZS)
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
3.20
Imag(ZS)
12.00
10.38
8.95
7.70
6.60
5.65
4.82
4.11
3.49
2.96
2.50
2.09
1.72
1.38
1.05
0.71
0.34
-0.05
-0.50
-1.01
-1.60
-2.28
-3.04
-3.86
-4.73
-5.63
-6.54
-7.45
-8.34
-9.20
-10.00
-10.74
-11.43
-12.06
-12.66
-13.23
-13.78
-14.33
-14.87
-15.43
-16.00
-16.60
-17.25
-17.94
-18.70
-19.52
-20.42
-21.41
-22.49
-23.69
-25.00
Real(ZL)
14.30
13.92
13.53
13.15
12.77
12.39
12.00
11.62
11.24
10.85
10.47
10.29
10.10
9.92
9.73
9.55
9.37
9.18
9.00
8.81
8.63
8.68
8.74
8.79
8.85
8.90
8.95
9.01
9.06
9.12
9.17
9.20
9.22
9.25
9.27
9.30
9.32
9.35
9.37
9.40
9.42
9.84
10.27
10.69
11.11
11.54
11.96
12.38
12.80
13.23
13.65
Imag(ZL)
-1.20
-1.26
-1.31
-1.37
-1.42
-1.48
-1.53
-1.59
-1.64
-1.70
-1.75
-2.27
-2.79
-3.31
-3.83
-4.35
-4.86
-5.38
-5.90
-6.42
-6.94
-7.17
-7.39
-7.62
-7.85
-8.08
-8.30
-8.53
-8.76
-8.98
-9.21
-9.79
-10.38
-10.96
-11.54
-12.13
-12.71
-13.29
-13.87
-14.46
-15.04
-15.58
-16.12
-16.66
-17.20
-17.74
-18.27
-18.81
-19.35
-19.89
-20.43
G3dB [dB]
19.5
19.2
18.9
18.5
18.2
17.9
17.6
17.3
16.9
16.6
16.3
15.9
15.5
15.2
14.8
14.4
14.0
13.6
13.3
12.9
12.5
12.5
12.4www.DataSheet.net/
12.4
12.3
12.3
12.2
12.2
12.1
12.1
12.0
11.8
11.6
11.3
11.1
10.9
10.7
10.5
10.2
10.0
9.8
9.7
9.6
9.5
9.4
9.3
9.1
9.0
8.9
8.8
8.7
P3dB [dBm]
42.5
42.6
42.6
42.7
42.7
42.8
42.8
42.9
42.9
43.0
43.0
43.0
43.0
43.1
43.1
43.1
43.1
43.1
43.2
43.2
43.2
43.2
43.2
43.2
43.2
43.3
43.3
43.3
43.3
43.3
43.3
43.3
43.3
43.3
43.3
43.3
43.2
43.2
43.2
43.2
43.2
43.2
43.2
43.1
43.1
43.1
43.1
43.1
43.0
43.0
43.0
P3dB [W]
17.8
18.0
18.2
18.5
18.7
18.9
19.1
19.3
19.6
19.8
20.0
20.1
20.2
20.3
20.4
20.5
20.5
20.6
20.7
20.8
20.9
20.9
21.0
21.0
21.1
21.1
21.1
21.2
21.2
21.3
21.3
21.3
21.2
21.2
21.1
21.1
21.1
21.0
21.0
20.9
20.9
20.8
20.7
20.6
20.5
20.5
20.4
20.3
20.2
20.1
20.0
PAE @3dB[%]
55.4
55.8
56.1
56.2
56.3
56.3
56.2
56.1
55.9
55.6
55.4
55.2
54.9
54.7
54.5
54.3
54.2
54.2
54.3
54.4
54.7
55.1
55.6
56.1
56.7
57.3
57.9
58.6
59.1
59.6
60.0
60.3
60.5
60.5
60.5
60.3
60.1
59.7
59.3
58.8
58.2
57.5
56.8
55.9
55.0
54.1
53.0
52.0
50.8
49.6
48.4
Preliminary Data Sheet: Rev - A 06/14/2011
© 2011 TriQuint Semiconductor, Inc.
- 5 of 15-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr
5 Page 
T1G6001528-Q3
DC – 6 GHz 18 W GaN RF Power Transistor
Pin Description
1
1
2
TOP VIEW
3
2
BOTTOM VIEW
www.DataSheet.net/
Pin
Symbol
Description
1
Vd/ RF OUT
Drain voltage/ RF Output matched to 50 ohms; see Application Circuit on page
9 as an example.
2
Vg/RF IN
Gate voltage/ RF Input matched to 50 ohms; see Application Circuit on page 9
as an example
3
Flange
Source connected to ground; see Application Circuit on page 9 as an example.
The T1G6001528-Q3 will be marked with the “1528” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an auto-
generated number.
Preliminary Data Sheet: Rev - A 06/14/2011
© 2011 TriQuint Semiconductor, Inc.
- 11 of 15-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet T1G6001528-Q3.PDF ] | |
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