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PDF 2N5087 Data sheet ( Hoja de datos )
| Número de pieza | 2N5087 | |
| Descripción | CASE 29.04/ STYLE 1 TO-92 (TO-226AA) | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5087 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistor
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
Order this document
by 2N5087/D
2N5087
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
50
50
3.0
50
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Unit
°C/W
°C/W
Symbol
Min
V(BR)CEO
V(BR)CBO
ICBO
IEBO
50
50
—
—
Max Unit
— Vdc
— Vdc
50 nAdc
50 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces 2N5086/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page  
TYPICAL DYNAMIC CHARACTERISTICS
2N5087
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 0.5 V
tr
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn–On Time
50 70 100
1000
700 VCC = –ā3.0 V
500 IC/IB = 10
300
ts
IB1 = IB2
TJ = 25°C
200
100
70
50
tf
30
20
10
–1.0
–ā2.0 –ā3.0 –ā5.0 –ā7.0 –10 –ā20 –ā30
IC, COLLECTOR CURRENT (mA)
Figure 12. Turn–Off Time
–ā50 –ā70 –100
500
TJ = 25°C
300 VCE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
Figure 13. Current–Gain — Bandwidth Product
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0 Cob
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Capacitance
20
50
20
VCE = –10 Vdc
10 f = 1.0 kHz
7.0 TA = 25°C
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 15. Input Impedance
50 100
200
VCE = 10 Vdc
100 f = 1.0 kHz
70 TA = 25°C
50
30
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
50 100
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N5087.PDF ] | |
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