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Número de pieza | CGHV96100F2 | |
Descripción | Input/Output Matched GaN HEMT / Power Amplifer | |
Fabricantes | CREE | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CGHV96100F2 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! CGHV96100F2
100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier
Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
Matched (IM) FET offers excellent power added efficiency in comparison
to other technologies. GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs also
offer greater power density and wider bandwidths compared to GaAs
transistors. This IM FET is available in a metal/ceramic flanged package
for optimal electrical and thermal performance.
PN:
Package
CTGypHeV:9464100201F02
Typical Performance Over 8.4-9.6 GHz (TC = 25˚C)
Parameter
8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz
Linear Gain
12.7
12.4
12.7
13.1
13.1
12.4
Output Power
151 147 150 152 140 131
Power Gain
Power Added Efficiency
10.8
44
10.6
42
10.7
www.DataSheet.co.kr
44
10.7
43
10.5
45
10.2
45
Note: Measured in CGHV96100F2-TB (838179) under 100 µS pulse width, 10% duty, Pin 41.0 dBm (7.9 W)
Units
dB
W
dB
%
Features
• 8.4 - 9.6 GHz Operation
• 145 W POUT typical
• 10 dB Power Gain
• 45 % Typical PAE
• 50 Ohm Internally Matched
• <0.3 dB Power Droop
Applications
• Marine Radar
• Weather Monitoring
• Air Traffic Control
• Maritime Vessel Traffic Control
• Port Security
Subject to change without notice.
www.cree.com/wireless
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page CGHV96100F2 Typical Performance
Figure 5. - Power AddePdAEEfvfsi.cPiienncy vs. Input Power
VDD = 40 V, Pulse WiPdutlshed=1010 0us0/ 1µ0s%ecD,utDy uty Cycle = 10%
60
55
50
45
40
35
30
25
20 9.0 GHz
9.2 GHz
15 9.4 GHz
10 9.6 GHz
5
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Input Power (dBm)
44
52.00
Figure 6. - Output Power vs. Time
www.DataSheet.co.kr
VDD
=
40
V,
PIN
= O4u1tpudtBPmow,erDvus.tTyimCeycle
Pin 41 dBm
=
10%
51.90
51.80
51.70
51.60
51.50
51.40
51.30
10us
50uS
100uS
300uS
51.20
51.10
51.00
0
50 100 150 200 250 300 350 400 450
Pulse Length (µS)
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
5 CGHV96100F2 Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.net/
5 Page Part Number System
CGHV96100F2
Package, Power Test
Power Output (W)
Upper Frequency (GHz)
Cree GaN HEMT High Voltage Product Line
Parameter
Value
Units
Upper Frequency1
Power Output
Package
9.6
100
Flange
GHz
W
-
Table 1.
Note1: Alpha characters used in frequency
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
www.DataSheet.co.kr
Character Code
Code Value
A
B
C
D
E
F
G
H
J
K
Examples:
0
1
2
3
4
5
6
7
8
9
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
11 CGHV96100F2 Rev 1.0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.net/
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet CGHV96100F2.PDF ] |
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