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PDF 2SC4417 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4417 | |
| Descripción | Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC4417
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
s Features
q High transition frequency fT.
q Satisfactory linearity of forward current transfer ratio hFE.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
45
35
4
50
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 2Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICEO
VCBO
VCE = 20V, IB = 0
IC = 10µA, IE = 0
10 µA
45 V
Collector to emitter voltage
Emitter to base voltage
VCEO
VEBO
IE = 1mA, IB = 0
IE = 10µA, IC = 0
35
4
V
V
Forward current transfer ratio
hFE
VCB = 10V, IE = –10mA
20 50 100
Collector to emitter saturation voltage VCE(sat)
IC = 20mA, IB = 2mA
0.5 V
Transition frequency
fT VCB = 10V, IE = –10mA, f = 200MHz
500 MHz
Common emitter reverse transfer capacitance Cre
VCB = 10V, IE = –1mA, f = 10.7MHz
1.5 pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC4417.PDF ] | |
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