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PDF 2MBI300U4J-120-50 Data sheet ( Hoja de datos )

Número de pieza 2MBI300U4J-120-50
Descripción IGBT MODULE
Fabricantes Fuji 
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No Preview Available ! 2MBI300U4J-120-50 Hoja de datos, Descripción, Manual

SPECIFICATION
Device Name
Type Name
: IGBT Module
(RoHS compliant product)
: 2MBI300U4J-120-50
Spec. No. : MS5F 6857
www.DataSheet.co.kr
May 24 07 H.Kaneda
May 24 07 S.Miyashita T.Miyasaka
K.Yamada
MS5F6857
1
15
H04-004-07b
Datasheet pdf - http://www.DataSheet4U.net/

1 page




2MBI300U4J-120-50 pdf
6.Indication on module
Display on the module label
- Logo of production
- Type name : 2MBI300U4J-120-50
- IC, VCES rating 300A 1200V
- Lot No. (5 digits)
- Place of manufacturing (code)
- Bar code
7.Recommend way of mounting on Heat sink
(1) Initial : 1/3 specified torque, sequence (1)(2)(3)(4)
(2) Final Full specified torque (3.5 Nm),sequence(4)(3)(2)(1)
(3) (1)
(2) (4)
Mounting holes
Heat sink
Module
8.Recommend way of PCB mounting on the Module
(1) Initial : 1/3 specified torque, sequence (1)(2)(3)(4)(5)
(2) Final Full specified torque (0.6 Nm),sequence(1)(2)(3)(4)(5)
www.DataSheet.co.kr
(4) (2)
(1)
(3) (5)
Mounting holes
PCB (Printed Circuit Board)
Module
M2.4 - M2.6 self tapping screw or M2.5 metrical screw is recommended.
The screw length to be PCB thickness +8mm or less.
Recommended tightening torque is 0.4 to 0.6 N m.
Note: FR4 is suitable as PCB material.
Nickel with a gold flash(Ni+Au) is recommended as surface metallization for spring landing pads.
Tin(Sn) can also be used.
9. Applicable category
This specification is applied to IGBT-Module named 2MBI300U4J-120-50.
MS5F6857
5
15
H04-004-03a
Datasheet pdf - http://www.DataSheet4U.net/

5 Page





2MBI300U4J-120-50 arduino
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
800
700
600 VGE=20V 15V 12V
500
400
10V
300
200
100
0
0
8V
1234
Collector-Emitter voltage : VCE [ V ]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
800
700
600 Tj=25oC
Tj=125oC
500
400
300
200
www.DataSheet.co.kr
100
0
01234
Collector-Emitter voltage : VCE [ V ]
5
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25oC
1000.0
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
800
700
600
VGE=20V 15V
12V
500
400
10V
300
200
100 8V
0
012345
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
10
8
6
4
2
Ic=600A
Ic=300A
Ic=150A
0
5 10 15 20 25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=300A, Tj=25oC
100.0
10.0
1.0
Cies
Cres
Coes
0.1
0
10 20
Collector-Emitter voltage : VCE [ V ]
30
VGE
VCE
0
0 300 600 900 1200 1500 1800
Gate charge : Qg [ nC ]
MS5F6857
11
15
H04-004-03a
Datasheet pdf - http://www.DataSheet4U.net/

11 Page







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