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PDF AM5521C Data sheet ( Hoja de datos )

Número de pieza AM5521C
Descripción MOSFET
Fabricantes Analog Power 
Logotipo Analog Power Logotipo



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Analog Power
AM5521C
N & P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
S1
• Low rDS(on) provides higher efficiency and G1
extends battery life
S2
• Low thermal impedance copper leadframe G2
DFN2X3 saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
VDS (V)
rDS(on) ()
20 0.058 @ VGS = 4.5V
0.077 @ VGS = 2.5V
-20 0.064 @ VGS = -4.5V
0.085 @ VGS = -2.5V
ID (A)
5
4.3
-4.7
-4.1
DFN2x3
Top View
D1 S2
1
2
8
7
D1
D1
G1
G2
3
4
6
5
D2
D2
S1 D2
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
VDS
Gate-Source Voltage
www.DataSheet.co.kr
VGS
Continuous Drain Currenta
TA=25oC
TA=70oC
ID
Pulsed Drain Currentb
IDM
Continuous Source Current (Diode Conduction)a
IS
Power Dissipationa
TA=25oC
TA=70oC
PD
Operating Junction and Storage Temperature Range TJ, Tstg
20 -20
±8 ±8
5 -4.7
4.1 -3.9
8 -8
4.5 -4.5
2.1
1.3
-55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RθJA
Maximum
62.5
80
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM5521C_A
Datasheet pdf - http://www.DataSheet4U.net/

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