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PDF FLL21E090IK Data sheet ( Hoja de datos )
| Número de pieza | FLL21E090IK | |
| Descripción | High Voltage - High Power GaAs FET | |
| Fabricantes | Eudyna Devices | |
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FLL21E090IK
FEATURES
・High Voltage Operation : VDS=28V
・High Gain: 15dB(typ.) at Pout=43dBm(Avg.)
・Broad Frequency Range : 2100 to 2200MHz
・Proven Reliability
High Voltage - High Power GaAs FET
DESCRIPTION
The FLL21E090IK is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA base station amplifiers while
offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol Condition
Rating
Drain-Source Voltage
VDS
32
Gate-Source Voltage
VGS Tc=25 oC -3
Total Power Dissipation
Pt
125
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
200
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)
Item
Symbol
Condition www.DataSheet.co.kr
Limit
Unit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
VDS
IGF
IGR
Tch
RG=2 Ω
RG=2 Ω
<28
<352
>-31
155
V
mA
mA
oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
min.
Pinch-Off Voltage
Vp VDS=5V, IDS=150mA -0.1
Gate-Source Breakdown Voltage
VGSO IGS=-1.5mA
-5
3rd Order Inter modulation Distortion
IM3
VDS=28V
-
Power Gain
Gp IDS(DC)=700mA 14.0
Drain Efficiency
ηd
Pout=43dBm(Avg.)
-
Adjacent Channel Leakage Power Ratio ACLR
note
-
Thermal Resistance
Rth Channel to Case
-
Limit
Typ. Max.
-0.2 -0.5
-35 -30
15.0 -
26 -
-36 -
1.1 1.2
Unit
V
V
dBc
dB
%
dBc
oC /W
Note 1 : IM3 ACLR and Gain test condition as follows:
IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.
ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,
measured over 3.84MHz at fo+/5MHz.
Edition 1.2
Mar 2004
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
IK Package Outline
Metal-Ceramic Hermetic Package
FLL21E090IK
High Voltage - High Power GaAs FET
www.DataSheet.co.kr
PIN ASSIGMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
Unit:mm
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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| PDF Descargar | [ Datasheet FLL21E090IK.PDF ] | |
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