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PDF FLL21E045IY Data sheet ( Hoja de datos )

Número de pieza FLL21E045IY
Descripción High Power GaAs FET
Fabricantes Eudyna Devices 
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FLL21E045IY
L,S-band High Power GaAs FET
FEATURES
High Voltage Operation (VDS=28V) GaAs FET
High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.)
Broad Frequency Range : 2110 to 2170MHz
High Reliability
DESCRIPTION
The FLL21E045IY is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA and Multi-carrier PCS base station
amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
T s tg
Tch
TC=25oC
(Case Tem perature)
-
-
32
-3
92
65 to +175
200
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)
Item
Symbol
www.DataSheet.co.kr
Condition
Limit
Unit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
VDS
IGF RG=2
IGR RG=2
Tch
<28
<176
>-15.9
155
V
mA
mA
oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol
Condition
Limit
Min. Typ. Max.
Unit
Pinch-Off Voltage
Gate-Source Breakdown Voltage
3rd Order Intermodulation Distortion
Power Gain
Drain Efficiency
Adjacent Channel Leakage Power Ratio
Themal Resistance
VP
VGSO
IM3
GP
ηD
ACLR
Rth
VDS=5V, IDS=75.4mA
IGS=-754uA
VDS=28V
IDS(DC)=500mA
Pout=40dBm(Avg.)
Note 1
Channel to Case
-0.1 -0.2 -0.5
-5 -
-
- -33 -30
14.5 15.5 -
- 26 -
- -35 -
- 1.7 1.9
V
V
dBc
dB
%
dBc
oC/W
Note 1 : IM3, ACLR and Gain test conditions as follows
IM3 & Gain : f0=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f0-15MHz and f1+15MHz.
ACLR : f0=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f0+/-5MHz
ESD
CLASS III
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k)
CASE STYLE : IY
Edition 1.1
June 2004
1
Datasheet pdf - http://www.DataSheet4U.net/

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FLL21E045IY pdf
FLL21E045IY
L,S-band High Power GaAs FET
■ IY Package Outline
9.98
R1.524
3.251
12.7
29.50
34.036
4.826
9.779
4.826
www.DataSheet.co.kr
0.152
1.575
Unit : mm
5
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