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PDF 04N70BF-H Data sheet ( Hoja de datos )
| Número de pieza | 04N70BF-H | |
| Descripción | AP04N70BF-H | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP04N70BF-H
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
▼ RoHS Compliant
G
D
S
BVDSS
RDS(ON)
ID
700V
2.4Ω
4A
Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220FM
type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
DS
TO-220FM
The TO-220FM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
circuits.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
www.DataSheet.co.kr
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
±30
4
2.5
15
33
0.26
100
4
4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.8
65
Units
℃/W
℃/W
Data & specifications subject to change without notice
200704051-1/6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
AP04N70BF-H
16
I D =4A
14
12 V DS =320V
V DS =400V
10
V DS =480V
8
6
4
2
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
25
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1 6 11 16 21 26 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
www.DataSheet.co.kr
100
10
T j =150 o C
T j = 25 o C
1
0.1
0
0.2 0.4 0.6 0.8
1
V SD (V)
1.2 1.4 1.6
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50
0
50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5/6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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| PDF Descargar | [ Datasheet 04N70BF-H.PDF ] | |
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