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PDF TBB1005 Data sheet ( Hoja de datos )

Número de pieza TBB1005
Descripción Twin Built in Biasing Circuit MOS FET IC
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! TBB1005 Hoja de datos, Descripción, Manual

TBB1005
Twin Built in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
REJ03G0843-0900
Rev.9.00
Aug 22, 2006
Features
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
Suitable for World Standard Tuner RF amplifier.
Very useful for total tuner cost reduction.
Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Provide mini mold packages; CMPAK-6
Outline
RENESAS Package code: PTSP0006JA-A
(Package name: CMPAK-6)
4
5
6
3
2
1
Notes:
1. Marking is “EM”.
www.DataSheet.co.kr
2. TBB1005 is individual type number of RENESAS TWIN BBFET.
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
Rev.9.00 Aug 22, 2006 page 1 of 9
Datasheet pdf - http://www.DataSheet4U.net/

1 page




TBB1005 pdf
TBB1005
Equivalent Circuit
No.1
Drain(1)
No.2
Source
No.3
Drain(2)
BBFET-(1)
BBFET-(2)
No.6
Gate-1(1)
No.5
Gate-2
No.4
Gate-1(2)
200 MHz Power Gain, Noise Figure Test Circuit
VT
1000p
VG2
1000p
VT
1000p
Input(50)
1000p
1000p
47k
47k TWINBBFET
L1
36p
1000p
1SV70
RG
82k
www.DataSheet.co.kr
47k
L2 1000p
Output(50)
10p max
RFC
1SV70
1000p
VD = VG1
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
Unit : Resistance ()
Capacitance (F)
Rev.9.00 Aug 22, 2006 page 5 of 9
Datasheet pdf - http://www.DataSheet4U.net/

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