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Número de pieza | RJP30H1DPD | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJP30H1DPD (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJP30H1DPD
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr = 80 ns typ., tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
Low leak current: ICES = 1 A max.
Outline
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
4
C
12 3
G
E
Preliminary Datasheet
R07DS0465EJ0200
Rev.2.00
Jun 15, 2011
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
www.DataSheet.co.kr
Symbol
VCES
VGES
IC
ic(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
30
200
40
3.13
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0465EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page RJP30H1DPD
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
3
1 D=1
0.5
0.3 0.2
0.1
0.1 0.05
0.03
0.02
0.01
1shot pulse
0.01
PDM
PW
T
1m
10 m
100 m
Pulse Width PW (s)
D=
PW
T
1 10
Preliminary
Switching Time Test Circuit
Ic Monitor
Vin Monitor
RL
Rg
Vin = 15 V
D.U.T.
VCC
Waveform
90%
Vin
www.DataSheet.co.kr
10%
90%
90%
Ic
td(on)
10%
tr
ton
td(off)
10%
tf
toff
R07DS0465EJ0200 Rev.2.00
Jun 15, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJP30H1DPD.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJP30H1DPD | N-Channel Power MOSFET / Transistor | Renesas |
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