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Número de pieza | RJL5032DPP-M0 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJL5032DPP-M0 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJL5032DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-state resistance
RDS(on) = 2.2 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C)
• High speed switching
• Built in fast recovery diode
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
23
G
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note1
IAPNote3
Pch Note 2
Channel to case thermal Impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Preliminary Datasheet
R07DS0251EJ0100
Rev.1.00
May 23, 2011
D
1. Gate
2. Drain
3. Source
S
Value
500
±30
3
12
3
30.6
4.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0251EJ0100 Rev.1.00
May 23, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page RJL5032DPP-M0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
1 D=1
0.5
0.3 0.2
0.1
0.05
0.1 0.02
1shot pulse
0.01
0.03
0.0001
0.001
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.08°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
0.01 0.1
1
Pulse Width PW (s)
10
100 1000
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 250 V
Waveform
90%
Vin
Vout
www.DataSheet.co.kr
10%
10%
90%
td(on)
tr
90%
td(off)
10%
tf
R07DS0251EJ0100 Rev.1.00
May 23, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJL5032DPP-M0.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJL5032DPP-M0 | N-Channel Power MOSFET / Transistor | Renesas |
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