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PDF RJK6034DPD-E0 Data sheet ( Hoja de datos )
| Número de pieza | RJK6034DPD-E0 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK6034DPD-E0
600 V - 1 A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
4
12 3
G
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
VDSS
VGSS
ID
ID
Note1
(pulse)
IAP Note3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Preliminary Datasheet
R07DS0553EJ0100
Rev.1.00
Oct 13, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
30
1
2
1
36.7
3.4
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
C/W
C
C
R07DS0553EJ0100 Rev.1.00
Oct 13, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RJK6034DPD-E0
3
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
Preliminary
D=1
1
0.5
0.2
0.3 0.1
0.05
1shot pulse
0.01
0.02
0.1
10 μ
100 μ
1m
θch – c(t) = γ s (t) • θ ch – c
θch – c = 3.4°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10 m 100 m
1
10 100 1000
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
Waveform
90%
Vin
Vout
www.DataSheet.co.kr
10%
10%
90%
td(on)
tr
90%
td(off)
10%
tf
R07DS0553EJ0100 Rev.1.00
Oct 13, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK6034DPD-E0.PDF ] | |
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