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Número de pieza | RJK6012DPE | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJK6012DPE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJK6012DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
www.DataSheet.co.kr
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0445EJ0300
(Previous: REJ03G1481-0200)
Rev.3.00
Jun 17, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
30
10
20
10
20
3
0.49
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0445EJ0300 Rev.3.00
Jun 17, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page RJK6012DPE
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1 D=1
0.5
0.3 0.2
0.1
0.1
0.05
0.02
0.03
0.01
one
shot
pulse
0.01
10 μ
100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Preliminary
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
Waveform
90%
Vin
Vout
10%
10%
www.DataSheet.co.kr
90%
td(on)
tr
90%
td(off)
10%
tf
R07DS0445EJ0300 Rev.3.00
Jun 17, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJK6012DPE.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJK6012DPE | N-Channel Power MOSFET / Transistor | Renesas |
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