(PDF) RJK4513DPE Datasheet - N-Channel Power MOSFET / Transistor

Número de pieza	RJK4513DPE
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	Renesas
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No Preview Available ! RJK4513DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.33 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C www.DataSheet.co.kr Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg REJ03G1586-0100 Rev.1.00 Dec 08, 2009 D 1. Gate 2. Drain 3. Source 4. Drain S Ratings 450 ±30 16 48 16 48 4 0.9 100 1.25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C REJ03G1586-0100 Rev.1.00 Dec 08, 2009 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF RJK4513DPE Data sheet ( Hoja de datos )