(PDF) RJK2017DPP Datasheet - N-Channel Power MOSFET / Transistor

Número de pieza	RJK2017DPP
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	Renesas
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No Preview Available ! RJK2017DPP Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) G 1 23 Absolute Maximum Ratings www.DataSheet.co.kr Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID Note4 ID (pulse) Note1 IDR IAP Note3 EAR Note3 Pch Note2 Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C 4. Limited by maximum safe operation area REJ03G1797-0200 Rev.2.00 Aug 26, 2009 D 1. Gate 2. Drain 3. Source S Ratings 200 ±30 45 135 45 12 9.6 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C REJ03G1797-0200 Rev.2.00 Aug 26, 2009 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF RJK2017DPP Data sheet ( Hoja de datos )