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PDF RJK1021DPE Data sheet ( Hoja de datos )

Número de pieza RJK1021DPE
Descripción N-Channel Power MOSFET / Transistor
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJK1021DPE Hoja de datos, Descripción, Manual

RJK1021DPE
N-Channel Power MOSFET
High-Speed Switching Use
Features
VDSS : 100 V
RDS(on) : 20 m(Max)
ID : 70 A
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
1G
2, 4
D
REJ03G1630-0100
Rev.1.00
Apr 03, 2008
1. Gate
2. Drain
3. Source
4. Drain
www.DataSheet.co.kr
S
3
Application
Motor control, Lighting control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Value at Tc = 25°C
2. STch = 25°C, Tch 150°C, L = 100 µH
Symbol
VDSS
VGSS
ID
ID (pulse)
IDR
IDR (pulse)
IAP Note2
Pch Note1
θch-c
Tch
Tstg
Ratings
100
±20
70
140
70
140
35
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G1630-0100 Rev.1.00 Apr 03, 2008
Page 1 of 6
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RJK1021DPE pdf
RJK1021DPE
Reverse Drain Current vs.
Source to Drain Voltage
100
Pulse Test
80
60 10 V
5V
40
VGS = 0 V, -5 V
20
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Avalanche Current vs.Case Temperature
40
L = 100 µH
30
20
10
0
25 50 75 100 125 150 175 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10.0
3
D=1
1
0.5
0.3 0.2
00..105
0.02
0.1 0.01
0.03 1shot pulse
0.01
100 µ
1m
θch – c(t) = γs (t) • θch – c
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θch – c = 1.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
25
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 50 V
Waveform
90%
Vin 10%
Vout 10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1630-0100 Rev.1.00 Apr 03, 2008
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