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PDF DMP2066LSN Data sheet ( Hoja de datos )

Número de pieza DMP2066LSN
Descripción P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Features
Low RDS(ON):
40 mΩ @VGS = -4.5V
70 mΩ @VGS = -2.5V
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4)
DMP2066LSN
P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
Case: SC-59
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See page 4
Weight: 0.008 grams (approximate)
SC-59
Drain
D
Gate
TOP VIEW
Source
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
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IDM
IS
GS
Pin Configuration
Value
-20
±12
-4.6
-3.7
-18
2.0
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.25
100
-55 to +150
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t 10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C/W
°C
DMP2066LSN
Document number: DS31467 Rev. 3 - 2
1 of 4
www.diodes.com
August 2008
© Diodes Incorporated
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