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PDF 2SC4092 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4092 | |
| Descripción | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4092 is an NPN silicon epitaxial transistor designed for low-
noise amplifier at VHF, UHF band.
It is contained in 4 pins mini-mold package which enables high-isolation
gain.
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
−0.3
1.5
+0.2
−0.1
FEATURES
• NF = 1.5 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA
• S21e2 = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
25
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 70
Total Power Dissipation
PT
200
Junction Temperature
Tj
150
Storage Temperature
Tstg −65 to +150
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE 40
Gain Bandwidth Product
fT
6
Output Capacitance
Insertion Power Gain
Cob 0.55
S21e2
9.5
12
Noise Figure
NF 1.5
Maximum Available Gain
MAG
14.5
MAX.
0.1
0.1
200
0.9
3.0
5° 5°
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
UNIT
µA
µA
GHz
pF
dB
dB
dB
TEST CONDITIONS
VCB = 15 V, IE = 0
VEB = 2.0 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA f = 1.0 GHz
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
hFE Classification
Class
R4/RD *
Marking
R4
hFE 40 to 120
R5/RE *
R5
100 to 200
* Old Specification / New Specification
Document No. P10363EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
© 1987
1 page  
[MEMO]
2SC4092
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SC4092.PDF ] | |
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