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PDF RBQ30NS65A Data sheet ( Hoja de datos )
| Número de pieza | RBQ30NS65A | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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Schottky Barrier Diode
RBQ30NS65A
lApplications
General rectification
lDimensions (Unit : mm)
lFeatures
1)Cathode Common Dual type.(LPDS)
2)Low IR.
BQ30NS
65A
①
Data Sheet
lLand size figure (Unit : mm)
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
lTaping dimensions (Unit : mm)
lStructure
①②③
www.DataSheet.co.kr
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
Reverse voltage (DC)
VRM
65
VR 65
Average rectified forward current (*1)
Io
30
Forward current surge peak (60Hz・1cyc) (*2)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg -40 to +150
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
lElectrical characteristics (Tj=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF - - 0.69
IR - - 0.45
Unit
V
V
A
A
°C
°C
Unit
V IF=15A
mA VR=65V
Conditions
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
Notes
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
Datasheet pdf - http://www.DataSheet4U.net/
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| PDF Descargar | [ Datasheet RBQ30NS65A.PDF ] | |
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