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PDF RBQ10T65A Data sheet ( Hoja de datos )
| Número de pieza | RBQ10T65A | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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Data Sheet
Schottky Barrier Diode
RBQ10T65A
lApplications
General rectification
lFeatures
1)Cathode common type.
2)Low IR
3)High reliability
lConstruction
Silicon epitaxial planer
lDimensions (Unit : mm)
10.0±0.3
0.1
lStructure
4.5±0.3
0.1
2.8±0.2
0.1
①
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
ROHM : TO220FN
① Manufacture Date
2.6±0.5
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lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak （60Hz・1cyc）
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits
65
65
10
50
150
-40 to +150
Unit
V
V
A
A
C
C
lElectrical characteristics (Tj=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
VF
-
- 0.69
V IF=5A
IR
-
- 150
mA VR=65V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
Notes
Notice
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
Datasheet pdf - http://www.DataSheet4U.net/
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