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PDF RBQ10B45A Data sheet ( Hoja de datos )
| Número de pieza | RBQ10B45A | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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Data Sheet
Schottky Barrier Diode
RBQ10B45A
lApplications
General rectification
lFeatures
1)Power mold type.(CPD)
2)Low IR
3)High reliability
lConstruction
Silicon epitaxial planer
lDimensions (Unit : mm)
C0.5
6.5±0.2
5.1±0.2
0.1
2.3±0.2
0.1
0.5±0.1
①
0.9
（1） （2） （3）
0.75
0.65±0.1
2.3±0.2 2.3±0.2
0.5±0.1
1.0±0.2
ROHM : CPD
JEITA : SC-63
① Manufacture Date
lTaping specifications (Unit : mm)
lLand size figure (Unit : mm)
6.0
1.6 1.6
CPD 2.3 2.3
lStructure
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lAbsolute maximum ratings(Tc=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)(*2)
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode.
(*2)Per diode.
Limits
45
45
10
50
150
-40 to +150
lElectrical characteristics(Tj=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF - - 0.65
IR - - 0.15
Unit
V
V
A
A
°C
°C
Unit Conditions
V IF=5A
mA VR=45V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
Notes
Notice
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
Datasheet pdf - http://www.DataSheet4U.net/
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