(PDF) RB501V-40 Datasheet - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Número de pieza	RB501V-40
Descripción	SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Fabricantes	SEMTECH ELECTRONICS
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No Preview Available ! RB501V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • High reliability Applications • Low current rectification PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 S7 Top View Marking Code: "S7" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range www.DataSheet.co.kr VRM 45 VR 40 IO 0.1 IFSM 1 Tj 125 Ts - 40 to + 125 V V A A OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 10 mA Reverse Current at VR = 10 V Capacitance Between Terminals at VR = 10 V, f = 1 MHz Note: ESD sensitive product handling required. Symbol VF VF IR CT Typ. - - - 6 Max. 0.55 0.34 30 - Unit V V µA pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF RB501V-40 Data sheet ( Hoja de datos )