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PDF 2SC3902 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3902 | |
| Descripción | PNP/NPN Epitaxial Planar Silicon Transistors | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC3902 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Ordering number:EN2101B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1507/2SC3902
160V/1.5A Switching Applications
Applications
· Color TV audio output, converters, inverters.
Features
· High breakdown voltage.
· Large current capacity.
· Adoption of FBET and MBIT process.
· The plastic-covered heat sink eliminates the need for
an insulator when mounting the 2SA1507/2SC3902.
Package Dimensions
unit:mm
2042B
[2SA1507/2SC3902]
( ) : 2SA1507
Specifications
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)500mA, IB=(–)50mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Turn-ON Time
Storage Time
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)500mA, IB=(–)50mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Fall Time
tf See specified Test Circuit
Ratings
(–)180
(–)160
(–)6
(–)1.5
(–)2.5
1.5
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
100*
90
120
(22)
14
(–0.2)
0.13
(–)0.85
(–)180
(–)160
(–)6
0.04
(0.7)
1.2
(0.04)
0.08
max
(–)0.1
(–)0.1
400*
(–0.5)
0.45
(–)1.2
Unit
µA
µA
MHz
pF
pF
V
V
V
V
V
V
µs
µs
µs
µs
µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/O2196TS (KOTO) 8-9520/3307KI/9116AT, TS No.2101-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC3902.PDF ] | |
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