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Número de pieza | FP15R12W1T4 | |
Descripción | IGBT module | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FP15R12W1T4 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! Technische Information / technical information
IGBT-Module
IGBT-modules
FP15R12W1T4
EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitt
EasyPIM™ module with Trench/Fieldstop IGBT4 and Emi
Vorläufige Daten / preliminary data
er Controlled 4 Diode und NTC
tter Controlled 4 diode and NTC
V†Š» = 1200V
I† ÒÓÑ = 15A / I†ç¢ = 30A
Typische Anwendungen
• Hilfsumrichter
• Klimaanlagen
• Motorantriebe
Typical Applications
• Auxiliary Inverters
• Airconditions
• Motor Drives
Elektrische Eigenschaften
Electrical Features
• Niedrige Schaltverluste
• Trench IGBT 4
• Low Switching Losses
www.DataSheet.co.kr
• Trench IGBT 4
• V†ŠÙÈÚ mit positivem Temperaturkoeffizienten
• V†ŠÙÈÚ with positive Temperature Coefficient
• niedriges V†ŠÙÈÚ
• Low V†ŠÙÈÚ
Mechanische Eigenschaften
• AlèOé Substrat für kleinen thermischen
Widerstand
• Kompaktes Design
• Lötverbindungs Technologie
• Robuste Montage durch integrierte
Befestigungsklammern
Mechanical Features
• AlèOé Substrate for Low Thermal Resistance
• Compact Design
• Solder Contact Technology
• Rugged mounting due to integrated mounting
clamps
Module Label Code
Barcode Code 128
DMX - Code
prepared by: DK
approved by: MB
Content of the Code
Module Serial Number
Module Material Number
Production Order Number
Datecode (Production Year)
Datecode (Production Week)
date of publication: 2009-10-30
revision: 2.2
material no: 29257
UL approved (E83335)
1
Digit
1- 5
6 - 11
12 - 19
20 - 21
22 - 23
Datasheet pdf - http://www.DataSheet4U.net/
1 page Technische Information / technical information
IGBT-Module
IGBT-modules
FP15R12W1T4
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tÔ = 1 ms
Grenzlastintegral
I²t - value
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
IŒ = 10 A, V•Š = 0 V
IŒ = 10 A, V•Š = 0 V
IŒ = 10 A, V•Š = 0 V
Rückstromspitze
peak reverse recovery current
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Sperrverzögerungsladung
recovered charge
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode / per diode
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
ð«ÈÙÚþ = 1 W/(m·K) /ðÃØþÈÙþ = 1 W/(m·K)
www.DataSheet.co.kr
Vorläufige Daten
preliminary data
Vçç¢
IŒ
IŒç¢
I²t
1200
10
20
16,0
V
A
A
A²s
min. typ. max.
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
VŒ
1,75 2,25
1,75
1,75
V
V
V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Iç¢
12,0
10,0
8,00
A
A
A
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
QØ
0,90
1,70
1,90
µC
µC
µC
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
EØþÊ
0,24
0,52
0,59
mJ
mJ
mJ
RÚÌœ†
1,75 1,90 K/W
RÚ̆™
1,30
K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Nennwiderstand
rated resistance
T† = 25°C
Abweichung von Ræåå
deviation of Ræåå
T† = 100°C, Ræåå = 493 Â
Verlustleistung
power dissipation
T† = 25°C
B-Wert
B-value
Rè = Rèë exp [Bèëõëå(1/Tè - 1/(298,15 K))]
B-Wert
B-value
Rè = Rèë exp [Bèëõîå(1/Tè - 1/(298,15 K))]
B-Wert
B-value
Rè = Rèë exp [Bèëõæåå(1/Tè - 1/(298,15 K))]
Angaben gemäß gültiger Application Note.
Specification according to the valid application no
te.
min. typ. max.
Rèë 5,00 kÂ
ÆR/R -5
5%
Pèë 20,0 mW
Bèëõëå
3375
K
Bèëõîå
3411
K
Bèëõæåå
3433
K
prepared by: DK
approved by: MB
date of publication: 2009-10-30
revision: 2.2
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page Technische Information / technical information
IGBT-Module
IGBT-modules
FP15R12W1T4
Schaltplan / circuit diagram
Vorläufige Daten
preliminary data
ϑ
Gehäuseabmessungen / package outlines
www.DataSheet.co.kr
Infineon
prepared by: DK
approved by: MB
date of publication: 2009-10-30
revision: 2.2
11
Datasheet pdf - http://www.DataSheet4U.net/
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet FP15R12W1T4.PDF ] |
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